Abstract
Both solution nanowire ZnO and sputtered Al thin film on SiO2as the wire-film structure and the Al film were a conductive channel for electrical-induced crystallization (EIC). Direct current (DC) raised the temperature of the Al film and improved the crystallization of the nanostructure. The effects of EIC not only induced Al atomic interface diffusion, but also doped Al on the roots of ZnO wires to form aluminum doped zinc oxide (AZO)/ZnO wires. The Al doping concentration and the distance of the ZnO wire increased with increasing the electrical duration. Also, the electrical current-induced temperature was~211°C (solid-state doped process) and so could be applied to low-temperature optoelectronic devices.
Highlights
Zinc oxide (ZnO) is a II–VI compound semiconductor with a hexagonal wurtzite structure
The ZnO nanowires had grown on the ZnO/Al film uniformly (Figure 3(a))
From observations of the interfaces (Figure 3(b)), the ZnO nanowires had an excellent bonding interface with the seed layer and the growth direction was perpendicular to the surface
Summary
Zinc oxide (ZnO) is a II–VI compound semiconductor with a hexagonal wurtzite structure. One-dimensional ZnO nanowires have the advantages of light extraction efficiency and different light-emitting mechanisms (UV emission, Green emission), so they have extensive applications in nano-optoelectronic devices [1, 2]. Much research shows that highquality ZnO nanowires are a very important factor in nanodevices [3, 4]. Heat treatment [5] and doped-metal atoms [6,7,8] are effective and convenient methods to improve the physical properties (e.g, structure, magnetic, and p-n junction)
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