Abstract
We demonstrate that van der Waals heterostructures based on CrI3, MoS2 and a 3D semiconductor source may allow for all electrical control of spin polarized carrier injection into MoS2. We demonstrate this possibility using a simple resonant tunneling device structure and model it using the transfer matrix method. Our results show that electrically controlled spin polarized carrier injection is theoretically possible at low device bias.
Highlights
T HE control of spin polarized carrier injection is of great importance to the fields of spintronics and valleytronics, which seek to use the spin of carriers as an additional degree of freedom in device design
One of the most popular approaches to spin injection and control in Transition metal dichalcogenides (TMDCs) is that of Magnetic Tunnel Junctions (MTJs) using different magnetic metal contacts [3], [4]
Our proposed spin Resonant Tunneling Device (RTD) consists of six parts, a bulk semiconductor source, one or two barrier layers, a magnetic well material, a TMDC drain, an insulator and a back-gate material made of either metal or highly doped semiconductor
Summary
T HE control of spin polarized carrier injection is of great importance to the fields of spintronics and valleytronics, which seek to use the spin of carriers as an additional degree of freedom in device design. Researching spin-injection and control into TMDCs is of great practical importance in the application of TMDC based devices. There is proximity spin filtering [8] where a 2D magnetic material such as CrI3 is placed on top of a TMDC to lift the valley degeneracy of the TMDC layer and create a net spin-polarized carrier population. To get around these limitations, we propose a Resonant Tunneling Device (RTD) to control the injection of spin polarized carriers. The unique properties of layered 2D materials in conjunction with the well understood physics of bulk semiconductors allow us to conceive of and simulate a device which can select the spin of carriers using all electric means
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
