Abstract
We apply a resonant tunneling model to explain various scanning tunneling microscopy (STM) images. The resonant tunneling model is used for determining the negative differential resistance characteristics of current-voltage ( I-V ) and STM images. We calculate the I-V characteristics of the resonant tunneling structure in STM system, and examine the relationship between the I-V characteristics and the anomalous STM images. Our results suggest that the resonant tunneling model can explain the anomalous STM images, for example, a reverse contrast image, and high and low magnification images.
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