Abstract
ABSTRACTThe transport of germanium through a co-deposited palladium-silicon layer on epitaxially grown GexSi1−x on Si(100) was studied. The Ge concentration in the UHV-CVD grown GexSi1−x film was x=.14 with a thickness of 155 nm. When the co-deposited layer is Pd rich with respect to Pd2Si, Ge was found to move through the Pd-Si layer and grow polycrystalline on the GexSi1−x. Ge transport and Pd2Si(111) grain growth ceased simultaneously. No transport was found for Si rich Pd-Si layers. Electrical characterization showed the contacts were ohmic with a specific contact resistivity between 6–12 μωQ-cm2 and an end resistance of.75 ω, resulting in a carrier concentration under the contact of 1.5×1014 cm−2. Hall effect measurements of the semiconductor gave n=5.77×1014 cm−2 and μ=36.96 cm−2/Vs. The sheet resistance of the contact layer was found to be 23.54 ω/square and the semiconductor was 237 ω/square.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
