Abstract
Non-stoichiometric SnO x thin films were made by RF magnetron sputtering of Sn in Ar+O 2 onto unheated glass. Electrical DC resistivity (ϱ) as well as spectral transmittance and reflectance were studied as a function of sputtering parameters. A sharp minimum in ϱ was observed at a well-defined gas composition. Optimized parameters gave films with ϱ≈3sx10 −3Ω cm at low deposition rate ( r), and ϱ≈10 −2Ω cm at r ≈ 3 nm/s . The luminous transmittance was ∼ 75%.
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