Abstract
The electrical properties of fluorite‐structure solid solutions of fully stabilized by doping with were studied. The dependence of the total ac electrical conductivity and ionic transference number upon composition , temperature (520°–1070°C), and oxygen partial pressure (1–10−19 atm) were investigated. Bulk electrical conductivities of polycrystalline specimens were separated from other polarizations by a complex impedance technique and were compared to conductivities of single crystals. The electrical conductivity generally decreased as the dopant level increased, although plateaus indicative of possible defect ordering were observed over the composition range of . The effects of surface finish, aspect ratio, and porosity of the specimens were negligible. All stabilized compositions were shown to be electrolytic conductors below 1070°C for oxygen partial pressures less than 1 atm. Oxygen diffusion coefficients were calculated using the Nernst‐Einstein equation.
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