Abstract

The compounds of the argyrodite structure have high conductivity values in the solid state due to the simultaneous coexistence of a "rigid" anionic framework and disordered cationic sublattice. In this regard, argyrodites are considered to be promising superionic materials for use as a working element of solid-state batteries. This work presents the results of the study of the electrophysical parameters of Ag8GeS6 single crystal grown by directional crystallization from the melt technique. It was found by the XRD method that the grown Ag8GeS6 single crystal crystallizes in a low-temperature orthorhombic modification with unit cell parameters: a = 15.147 Å, b = 7.469 Å, c = 10.584 Å. The frequency (10 Hz - 0.3 MHz) and temperature (20 - 110°C) dependence of the electrical conductivity was studied on a single crystal plate of Ag8GeS6 oriented in the (011) plane by impedance spectroscopy. The frequency dependence of the total electrical conductivity of Ag8GeS6 shows an increase in the total electrical conductivity with increasing frequency, which is typical for mixed ionic-electronic conductors. It was determined that the total conductivity of the Ag8GeS6 single crystal is 3.82 × 10-5 S/cm, and the activation energy is 0.728 eV.
 Keywords: argyrodites; single crystals; electrical conductivity; phase analysis.

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