Electrical Conduction of Silicon Nitride Films Deposited by SiH4-NH3 Reaction

Abstract

The electrical conduction of silicon nitride films deposited pyrolytically on silicon substrates by the reaction of silane (SiH4) and ammonia (NH3) is caused by the Pool-Frenkel mechansim at room temperature and by the tunnel mechanism at a temperature of 208 K. When the deposition temperature is 850°C, the electrical conductivity of the films at room temperature and 208 K decreases with increasing NH3/SiH4 ratio. When the NH3/SiH4 ratio is 30, the electrical conductivity of the films at room temperature and 208K is the lowest value at a deposition temperature 90O°C and 850°C, respectively.