Abstract
Thin film capacitors of lanthanum fluoride were fabricated by electron beam gun deposition. The current-voltage characteristics of these films were studied at different temperatures (300–470 K). It was observed that at high electric fields (>104 V cm−1 the current increases linearly with the square root of the field. The conduction mechanism appears to be predominantly by Poole-Frenkel emission in these films. The low field activation energy was estimated to be 0.40 eV and the results are discussed.
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