Abstract
The low‐temperature conductivity of thallic oxide (Tl2O3) is relatively insensitive to the equilibrium partial pressure of oxygen during annealing at 923°K, i.e. the maximum variation is ∼15% over the range of 0.01 to 1 atm O2, with a relative maximum occurring at ∼0.2 atm. The insensitivity in conductivity results from the compensating effects of increasing mobility and decreasing carrier concentration with increasing oxygen pressure during annealing. At low oxygen pressures, defect interactions complicate the interpretation of the measurements, but a calculated Fermi energy on the order of 0.8 eV is sufficiently close to other reported values to confirm the model of a highly degenerate semiconductor with a simple S‐like conduction band described by a parabolic density‐of‐states function.
Published Version
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