Abstract
Thallic oxide, “T12O3,” has been shown to be a degenerate n‐type semiconductor with resistivity varying from 60 to 150 μΩ‐cm over the range 4° to 900°K. The carrier concentration was 7 × 1020 cm−3 and is temperature independent. Room‐temperature Hall mobility was 105 cm2 V−1 s−1, increasing to 130 cm2 V−1 s−1 below 70°K. Donor states were shown to be native defects, probably oxygen vacancies.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
