Abstract
The thickness dependence of the electrical resistivity of MnTe and MnSe is reported for films of different compositions, deposited at different substrate temperatures and in the thickness range 25–180 nm. A computer-based technique is used within the framework of the Mayadas-Shatzles (MS) model to calculate p, R, l and ϱ 0 by a computer iteration and sorting process. The experimental data are in good agreement with the MS model over the entire thickness range.
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