Abstract
InAs/GaSb superlattice pin photodiodes, having an asymmetric period design, exhibited cut-off wavelength in the midwave infrared domain (MWIR) at 5μm at 77K. Electrical characterizations including dark-current and capacitance–voltage measurements were performed on single detectors in the temperature range (77–300K). The SL photodiode measurements revealed carrier concentrations of about 6×1014cm−3 at 77K, dark-current densities J=4×10−8A/cm2 at 77K for Vbias=−50mV and the measured R0A product is higher than 1.5×106Ωcm2 at 77K. Comparison to classical pin diodes with symmetric period design show that the differential resistance area product is improved by more than one order of magnitude. This result obtained demonstrates the strong influence of the period on the electrical properties of SL MWIR photodiodes.
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