Abstract
InAs/GaSb superlattice pin photodiodes showing asymmetrical period design were fabricated by MBE on ptype GaSb substrate. These SL structures exhibited cut-off wavelength in the midwave infrared domain (MWIR) at 5μm at 80K. Electrical characterizations including dark current and capacitance-voltage measurements were performed on single detectors in the temperature range [77K-300K]. The SL photodiode measurements revealed carrier concentrations of about 6x10 14 cm -3 at 77K, dark current densities J= 4x10 -8 A/cm 2 at 77K, J = 0.19A/cm 2 at 200K and J = 10A/cm 2 at 300K for Vbias =-50mV. The measured R 0 A product is higher than 1.5x106Ω.cm 2 at 77K and equal to 1x10 -2 Ω.cm 2 at T=300K, for cut-off device equal to 5μm and 6.05μm, respectively. These results are compared with the ones obtained by symmetrical SL structure and show that the differential resistance area product is improved by more than one order of magnitude. These results obtained help us to define the optimized SL pin structure design suitable for high temperature operation in the MWIR domain.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
