Electrical characterization under mechanical stress at various temperatures of PiN power diodes in a health monitoring approach

Abstract

In a new approach of health monitoring, it can be interesting to highlight an electrically dependent mechanical sensitive parameter of power devices allowing to follow the mechanical state of the power assembly. This study focuses on the electrical characterization under mechanical stress of 600V PiN diodes. To avoid any mechanical stress due to the soldering process, specific test vehicles using non soldered silicon power diodes obtained from dice lames cut from a wafer are used. Two crystal orientations have been taken into account. By applying low electrical bias in order to reduce self-heating, it is possible to proceed in static and switching electrical characterization under mechanical stress. Additionally, finite element simulations have been carried out in order to investigate the electrically biased device structure behavior under such mechanical stress. This approach will allow to qualify and calibrate a mechanical sensitive parameter for PiN power diodes.