Abstract
In the present work, the potential of zirconium silicate (ZrSi x O y ) films as an alternative gate dielectric to SiO 2 for future technology generations is demonstrated. Novel single-source precursors for MOCVD of zirconium silicate were synthesized and ZrSi x O y layers were deposited. I– V and C– V measurement data are presented and detected charge trapping phenomena are discussed.
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