Abstract
For future technology generations, the replacement of silicon dioxide as gate dielectric in metal-oxide–semiconductor devices becomes a challenging issue. Metal silicates are promising candidates in this context. In this paper, the potential of zirconium silicate films obtained by metal-organic chemical vapor deposition from a novel single-source precursor is shown. On basis of metal–insulator–semiconductor capacitors, data from capacitance–voltage, current–voltage, constant voltage stress, and constant current stress measurements are presented. Detected charge trapping phenomena, conduction mechanisms, and polarity dependence of device degradation are discussed.
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