Abstract

This paper demonstrates the development of a methodology using the micro four-point probe (μ4PP) technique to electrically characterize single nanometer-wide fins arranged in dense arrays. We show that through the concept of carefully controlling the electrical contact formation process, the electrical measurement can be confined to one individual fin although the used measurement electrodes physically contact more than one fin. We demonstrate that we can precisely measure the resistance of individual ca. 20 nm wide fins and that we can correlate the measured variations in fin resistance with variations in their nanometric width. Due to the demonstrated high precision of the technique, this opens the prospect for the use of μ4PP in electrical critical dimension metrology.

Highlights

  • The transition from planar to three-dimensional transistor architectures such as the fin field-effect transistor [1] has raised the need for measuring the electrical properties of nanometer-wide conducting features [2]

  • It has been shown that the micro four-point probe (μ4pp) technique, which is commonly used for sheet resistance measurements on blanket materials or relatively large pads [3,4,5], provides a solution to this requirement [6]

  • The experimental demonstration of using the punch-through current Ipulse to individually contact single Si fins in dense arrays is shown in Figure 2a, where the measured Rfin is plotted as a function of the fin width Wfin after using a high (100 μA) or low (25 μA) punch-through current to form the electrical contact

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Summary

Introduction

The transition from planar to three-dimensional transistor architectures such as the fin field-effect transistor (finFET) [1] has raised the need for measuring the electrical properties of nanometer-wide conducting features [2]. We describe further developments of the μ4pp technique, as implemented by the CAPRES A300 tool, which enable the electrical characterization of single nanometer-wide fins in dense fin arrays (pitch < 200 nm) with high precision and repeatability.

Results
Conclusion

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