Abstract
AbstractSchottky diodes prepared on silicon bonded wafers with dislocation network (DN) lying parallel to the sample surface at the depth of ∼2 μm were investigated by means of capacitance‐voltage (CV), current‐voltage (IV) measurements at 80 K under optical illumination. A model of the interpretation of CV and IV data is presented and discussed. It is shown that electron‐beam induced current (EBIC) mapping under the proper chosen forward bias voltages allows one to trace the inhomogeneities of the potential barrier at DN. The observed non‐uniformity of the DN barrier heights was ascribed to inhomogeneous distribution of small oxide precipitates lying at the dislocation network plane (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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