Abstract
Cathodoluminescent (CL) and electrical properties of the dislocation network (DN) produced by direct silicon wafer bonding were investigated. A strong impact of the electric field on the spectrum shape and the intensity of dislocation related CL of the DN built into space charge region (SCR) of Schottky-diode was found. Correlations between the characteristic features of the dependences of CL, dark current, electron beam induced current (EBIC) and capacitance on the applied bias were established. The energy diagram explaining obtained results is proposed.
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