Abstract
AbstractUltrashallow junctions (USJ) were created by tilted 5 keV As+ implantation to a dose of 3x1015 cm−2 followed by excimer laser annealing (ELA). Sheet resistance and capacitances were measured in the background layer below the USJ. Results showed that sheet resistance was dependent on the laser energies in the close vicinity of these diodes. Doping profiles extracted from the capacitances indicated electrical deactivation here caused by the residual implantation defects. The extent and location of the residual damage is shown to be strongly dependent on the implantation dose and tilt angles, and also influenced by the laser annealing.
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