Abstract
Capacitance–voltage measurements were made on Cr-gated metal–oxide–silicon structures with ultrathin (∼30 Å) thermal oxides. Using an empirical model, activation energies for the passivation of the Pb center were determined and found to be dependent on the charge state of the defect. Depassivation was found to occur at positive gate biases.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
