Abstract
Nitrogen doped p-ZnO film, with urea as nitrogen source, is fabricated by pulsed laser deposition on well-cleaned p-type (1 0 0) Si substrates. The structural and electrical properties of the p–p heterojunction are investigated by current–voltage ( I– V) and capacitance–voltage ( C– V) measurements. It shows a diode-like behavior with turn-on voltage of 0.5 V. The ideality factor η determined by applying positive potential in p-ZnO and negative potential along p-Si is found to be 6. Such a high value of η is attributed to lattice mismatch between ZnO and Si. and other factors responsible are thermoionic emission, minority carrier injection and recombination. C– V results indicate an abrupt interface and a band bending of 0.9 V in the silicon. Heterojunction band diagram for p-ZnO/p-Si is proposed.
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