Abstract
A Schottky barrier diode has been fabricated by depositing Ni on strained-Si (grown on a graded relaxed Si/sub 1-x/Ge/sub x/ buffer layer) and characterized in the temperature range of 125K-300K for the determination of Schottky barrier height (SBH), ideality factor (n) and interface quality of the contact. The current-voltage (I-V) characteristics have been simulated using SEMICAD device simulator. To fit the experimental I-V results with the simulation, an interfacial layer and a series resistance were included in the model. The ideality factor decreases with an increase in temperature, while the barrier height increases. Transmission electron micrograph has been studied to interpret the chemical phase and morphology of the germanosilicide film.
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