Electrical characterization of metal/diamond-like carbon/inorganic semiconductor MIS Schottky barrier diodes

Abstract

In this study, electrodeposited diamond-like carbon (DLC) film was used to fabricate 12 identical Au/DLC/p-Si metal–interlayer–semiconductor (MIS) Schottky diodes. Current–voltage (I–V) measurements were carried out to obtain diodes' parameters. The rectification ratios of the MIS diodes were found between 103 and 104. By using the forward bias I–V characteristics, the average ideality factor (n) and barrier height (Φb) values of Au/DLC/p-Si MIS structures were found as 2.06 and 0.84eV, respectively. The Φb value of 0.84eV obtained for Au/DLC/p-Si MIS diode was much higher than the value of 0.34 of conventional Au/p-Si Schottky diode. Cheung–Cheung functions were also used to extract barrier height and series resistance values and the obtained results were compared with I–V method. I–V measurements were also carried out under the hydrostatic pressure in the range of 0.0–2.0kbar. It was found that barrier height and series resistance values were highly pressure sensitive and increased with the ascending pressure. It was proposed that Au/DLC/p-Si Schottky MIS diode can be used as pressure sensor due to high sensitivity to changing pressure.