Abstract
Deep electron states in gallium doped CdTe have been studied by deep-level transient spectroscopy method. The Schottky Au‐CdTe diodes were processed to perform the investigations. Rectifying properties of diodes have been examined by the room temperature current‐voltage and capacitance‐voltage measurements. Deep-level transient spectroscopy measurements performed in the range of temperatures 77‐350 K yield the presence of three electron traps. The thermal activation energies and apparent capture cross-sections have been determined from related Arrhenius plots. The dominant trap of activation energy E2 = 0:33 eV and capture cross-section ae2 = 3 £ 10 i15 cm 2 has been assigned to the gallium related DX center present in the CdTe material.
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