Abstract
Different fluoride materials are used as gate dielectrics to fabricatecopper phthalocyanine (CuPc) thin film transistors (OTFTs). Thefabricated devices exhibit good electrical characteristics and themobility is found to be dependent on the gate voltage from 10−3to 10−1 cm2V−1s−1. The observed noticeableelectron injection at the drain electrode is of great significance inachieving ambipolar OTFTs. The same method for formation of organicsemiconductors and gate dielectric films greatly simplifies thefabrication process. This provides a convenient way to producehigh-performance OTFTs on a large scale and should be useful forintegration in organic displays.
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