Abstract
Copper phthalocyanine (CuPc) thin-film transistors have been fabricated using polymethyl methacrylate (PMMA) as gate dielectric. A bottom gate, staggered structure was selected to study the device performance. CuPc thin-films were deposited by thermal evaporation in a high vacuum system. The maximum process temperature achieved was 100°C, corresponding to the baking of the PMMA. The devices showed satisfactory p-type electrical characteristics with field-effect mobility and threshold voltage values around 0.2×10−4cm2V−1s−1 and 6V, respectively. The device electrical characteristics were correlated with the structural and morphological properties of the CuPc thin-films.
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