Abstract
We have deposited Cd metal contacts on molecular-beam epitaxy CdTe(112)B on Si(112) and have made electronic transport measurements to deduce the properties of the Schottky barrier diode thus formed. We find a room-temperature barrier height ϕB=0.92eV and an ideality factor n≈2. We suggest that the high value of n is due to generation–recombination currents associated with dislocations in the CdTe epilayer.
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