Abstract
A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100–150 °C) might be the best choice.
Highlights
Amorphous silicon layers are of particular interest for photovoltaic applications [1]
As thin amorphous silicon (a-Si) layers saturate the crystalline silicon (c-Si) surfaces, the formation of recombination centers is avoided, and high quality interfaces are formed, which is of great interest for heterojunction with intrinsic thin layer (HIT) cells [2]
This kind of solar cell consists of a crystalline/amorphous silicon heterojunction, and between both layers, a very thin film (~5 nm) of intrinsic amorphous silicon (i-a-Si:H) is introduced
Summary
Amorphous silicon layers are of particular interest for photovoltaic applications [1]. As thin amorphous silicon (a-Si) layers saturate the crystalline silicon (c-Si) surfaces, the formation of recombination centers is avoided, and high quality interfaces are formed, which is of great interest for heterojunction with intrinsic thin layer (HIT) cells [2]. This kind of solar cell consists of a crystalline/amorphous silicon heterojunction, and between both layers, a very thin film (~5 nm) of intrinsic amorphous silicon (i-a-Si:H) is introduced.
Published Version (Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have