Abstract

Excellent tin oxide (SnO2) ohmic and Schottky contacts are need for device utilizations and essential electrical characterization. Up to now, metal contact property studies on SnO2 are inadequate and provide miscellaneous results. Ohmic contacts have been studied on high quality epitaxial n-type tin oxide thin films that were grown by solid state chemical vapor deposition (SSCVD). To the best of our knowledge, this is the first time that Al-Zn co-doped SnO2 films grown by SSCVD have been reported. Non-alloyed Al/Ag, Al, and Ag contacts were characterized by current-voltage measurements. Ohmic contacts were realized using Al, Ag , and Al/Ag after an air treatment of the SnO2 surface.

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