Abstract
This article presents an approach for modeling of RF power transistor packages including bondwires. The approach is based on measurements of a real package in which the transistor chip was replaced with a 2-port of known parameters and connected to the package leads with multiple parallel wirebonds. Using the measurement results, an equivalent circuit of the package is constructed. The response of the circuit is then compared to measurements and results obtained through full-wave electromagnetic modeling to reveal good agreement. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2013. © 2013 Wiley Periodicals, Inc.
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