Abstract
Bi3.3Tb0.6Ti3O12(BTT), Bi3.3Tb0.6Ti2.97V0.03O12(BTTV), and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Tb doping into BIT also result in a remarkable improvement in ferroelectric property. The remanent polarization (Pr) and coercive field (Ec) of the BTT film were 25 μC/cm2 and 85 kV/cm, respectively. Furthermore, V substitution improves the Pr value of the BTVT film up to 35 μC/cm2, which is much larger than that of the BTT film.
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