Abstract

Metastable germanium-tin alloys are promising materials for optoelectronics and optics. Here we present the first electrical characterization of highly crystalline Ge0.81Sn0.19 nanowires grown in a solution-based process. The investigated Ge0.81Sn0.19 nanowires reveal ohmic behavior with resistivity of the nanowire material in the range of ∼1 × 10-4Ω m. The temperature-dependent resistivity measurements demonstrate the semiconducting behavior. Moreover, failure of devices upon heating to moderate temperatures initiating material degradation has been investigated to illustrate that characterization and device operation of these highly metastable materials have to be carefully conducted.

Highlights

  • Group IV semiconductor nanowires (NWs) are promising building blocks for various fields of application including electronic and sensing devices,[1,2] solar cells,[3,4] lithium ion batteries,[5,6] etc

  • A direct bandgap material based on Ge can be obtained by physical strain engineering in the semiconductor[14,15,16] or an effective alloying with high Sn concentrations of ∼8–10 at% in Ge1−xSnx,[17,18] which exceeds the thermodynamic solubility limit (∼1 at% Sn).[19]

  • The Ge1−xSnx NWs have been prepared by a microwave-based synthesis procedure described in literature.[44,49]

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Summary

Introduction

Group IV semiconductor nanowires (NWs) are promising building blocks for various fields of application including electronic and sensing devices,[1,2] solar cells,[3,4] lithium ion batteries,[5,6] etc. Because the required annealing temperatures or destabilization of the Ge1−xSnx material by the metallic contact can lead to undesired material degradation.[44] even the Ge0.81Sn0.19 NW-based two-terminal devices show ohmic behavior combined with high current levels as can be expected for a semiconductor material with high number and mobility of charge carriers (Fig. 2a).

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