Abstract

Hydrogen gas creates a highly damaging environment that degrades electrical properties in oxide based dielectrics and piezoelectrics. In this study, the degradation resistivity due to hydrogen gas in a barium titanate X7R dielectric is designed and processed for base metal electrode capacitors. The present paper is devoted to I-V measurements and the loss of resistivity in the electrode Schottky barriers. The DC degradation and asymmetries noted in I-V forward and reverse biasing conditions were assumed to be hydrogen ion interstitials, locally creating donor substitutions. Thermionic and field emission conductivity mechanisms are applied to model the I-V data; the conductivity is controlled by the Schottky barrier heights and hydrogen ions localizing at the interfaces. Finally, a mechanism was proposed for resistivity degradation due to exposure to hydrogen gas. The proposed mechanism predicts the degradation should be reversible, and its validity was examined by recovery tests.

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