Abstract
The electrical properties of DC reactive sputtered zirconium-nitride metallized metal-oxide-semiconductor (MOS) and metal-insulator-metal (MIM) devices on TiO2/p-Si and TiO2/ZrN films were studied using capacitance-voltage (C-V) and current-voltage (I-V) measurements at room temperature. Capacitances of the ZrN/TiO2/p-Si MOS device were measured in accumulation mode and inversion mode, from which flat band capacitance was found to be 2.86pF, which corresponds to flat band voltage of −1.7 V. Fixed oxide charged density and interface state density was found to be 1.63× 1010 cm−2 and 6.3× 1011 cm−2 eV−1. I-V characteristics revealed that the leakage current density was of 0.5 mA/cm2 in accumulation mode and 2 mA/cm2 in inversion mode at a field of 0.12 MV/cm, respectively. Dielectric breakdown of ZrN/TiO2/p-Si device was found to be 0.12 MV/cm in accumulation mode. Based on the C-V and I-V characteristics, the ZrN/TiO2/ZrN structure showed no variation in the capacitance value as the bias voltage was changed.
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