Abstract
The current-voltage characteristics of copper oxide (CuO) - zinc oxide (ZnO) heterojunctions under different illumination intensities were observed in this study. ZnO and CuO films were deposited on separate graphite electrodes via electrophoretic deposition (EPD). The films underwent heat treatment and were physically joined to form the p-n junction. The current-voltage characteristics of the junctions were obtained under forward and reverse bias under different illumination intensities. It was observed that the ZnO-CuO junctions exhibited diode-like behavior in the dark, indicated by the passing of current in forward bias and restricting in reverse bias. Under illumination, the junctions exhibited photodiode-like behavior, with increasing reverse current at greater illumination intensities.
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