Abstract
The electrical and thermal properties of Ru and Ru/Au ohmic contacts on two-step-surface-treated p-GaN have been investigated using current-voltage (I–V) measurements and Auger electron spectroscopy. It is shown that annealing at 700°C for 2 min in a flowing N2 atmosphere improves the I–V characteristics of the contacts. For example, the annealed Ru and Ru/Au schemes produce a specific contact resistance of 3.4 (±0.9)×10−3 and 1.2 (±1.1)×10−3 Ωcm2, respectively. It is also shown that annealing results in a large reduction (by ∼100 meV) in the Schottky barrier heights of the Ru and Ru/Au contacts, compared to the as-deposited ones. The electrical properties of the two-step-surface-treated Ru/Au contacts are compared with those of the conventionally treated contacts.
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