Year-end Sale % OFF 
Abstract
Ferroelectric and leakage current characteristics of the MOD-derived SrBi2xTa2O9 (0.8 ≤ x ≤ 1.6) and SrBi2.4(Ta1-yNby)2 O9 (0 ≤ y ≤ 1) thin films were investigated. The SBT and SBTN films were fully crystallized to Bi-layered perovskite structure by annealing at 800°C for 1 hour in oxygen atmosphere. The ferroelectric characteristics of the SBT films were optimized at the Bi/Ta mole ratio x of 1.2. The leakage current density of the Bi-excess SBT films decreased remarkably by the post-metallization annealing at 800°C for 10 minutes in oxygen ambient. The ferroelectric characteristics of the SBTN films were optimized with the SBN content y of 0.25. The SrBi2.4(Ta0.75Nb0.25)2 O9 film exhibited 2Pr and Ec of 19.04 μC/cm2 and 24.94 kV/cm at ±5 V, which were superior to 2Pr of 11.3 μC/cm2 and Ec of 39.6 kV/cm obtained for the SrBi2.4Ta2O9 film after the post-metallization annealing. The MOD-derived SrBi2.4(Ta0.75Nb0.25)2O9 film did not exhibit the polarization fatigue after 1011 switching cycles at ±5 V.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
