Abstract
The ferroelectric properties and leakage current mechanisms of polycrystalline SrBi2(V0.1Nb0.9)2O9(SBVN) thin films, which were deposited on Pt∕SiO2∕n-Si substrate by rf-magnetron sputtering and then annealed at 700°C for 60min in air, were investigated. These SBVN films showed excellent ferroelectric properties in terms of a large remnant polarization (2Pr) of ∼25μC∕cm2(2Ec∼200kV∕cm), fatigue free characteristics up to ⩾108 switching cycles and a low current density of 10−8A∕cm2 at 100kV∕cm. X-ray diffraction and scanning electron microscope investigations indicate that the sputtered films exhibit a dense, well crystallized microstructure having random orientations and with a rather smooth surface morphology. The improved ferroelectric and leakage current characteristics obtained at the low processing temperature are attributed to the larger polarizability attained through increased rattling space in the distorted Nb(V)O6 of the perovskite block due to the partial substitution of Nb with smaller V ions. The leakage current density of the SBVN thin films was studied at higher temperatures and the data were fitted with the Schottky and Poole-Frenkel emission models.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
