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Abstract
We have proposed and fabricated novel polycrystalline silicon thin film transistors (poly-Si TFTs) to have the properties of an offset gated structure in OFF state, while acting as a non-offset structure in ON state. The fabrication process is compatible with the conventional non-offset poly-Si TFT process and does not require any additional photolithographic step. Our experimental results show that the leakage current of the new device is two orders of magnitude lower than that of the non-offset device, while the ON current of the new device is almost identical with that of the non-offset device. Compared with the conventional device, it is found that the leakage current increase slowly with the negative gate voltage decrease and the ON/OFF current ratio is improved remarkably.
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