Abstract
Poly (3-hexylthiophene) (P3HT)-based thin film transistors (TFTs) array was fabricated on plastic substrates with O 2 plasma treatment and solution-based processes. Both the changes of hole Schottky barrier height and surface roughness of the gate insulators are supposed to account for the increased carrier mobility and charge carrying ability of the plasma treated devices. Additionally, polymer active layers formed by contact printing and spin-coating methods have been analyzed, which revealed that the electrical properties are different from the semiconductor growth mechanism. Based on the experiments, we fabricated P3HT TFTs array with 0.02–0.025 cm 2/V s in saturation carrier mobility and on/off current ratio about 10 3–10 4 on polycarbonate (PC) substrates.
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