Abstract
Microwave plasma oxidation (below 200 °C) of partially strain-compensated Si1−x−yGexCy (Ge:C=20:1 and 40:1) with and without a Si cap layer is reported. The electrical properties of grown oxides have been characterized using a metal–oxide–semiconductor structure. Fixed oxide charge density and mid-gap interface trap density are found to be 2.9×1011/cm2 and 8.8×1011/cm2/eV, respectively, for directly oxidized Si0.79Ge0.2C0.01 film. The oxide on samples with low C (0.5%) concentration, exhibits hole trapping, whereas electron trapping is observed for oxides on alloys containing 1% C.
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