Electrical characteristics of palladium silicide

Abstract

Resistivity and Hall mobility measurements were performed on Pd 2Si films grown on <100〉 and <111〉 oriented silicon substrates as a function of temperature and thickness of the films. The results show that Pd 2Si has metallic character. The Debye temperature of Pd 2Si was found to be 120±20°K and the concentration of the charge carriers, which are electrons, is 4 × 10 21 cm −3. The bulk value of the resistivity at room temperature is 25–30 ωΩcm and the Hall mobility is 50–60 cm 2 V −1 sec −1, both depending on the structure of Pd 2Si which is known to be epitaxial on <111〉 substrate but not on <100〉 substrate. This structural difference is clearly reflected by the electrical characteristics.