Electrical Characteristics of p-Type Bulk Si Fin Field-Effect Transistor Using Solid-Source Doping With 1-nm Phosphosilicate Glass

Abstract

For scaling of bulk Si Fin field-effect transistor (FinFET), suppression of short-channel effects is required without ON-state current degradation. In this letter, solid-source doping for channel doping using 1-nm phosphosilicate glass was demonstrated on both p-type (100) Si substrate and p-type bulk Si FinFET. The profile of phosphorus in p-type (100) Si substrate was analyzed by secondary ion mass spectrometry and it was diffused deeper with higher thermal budget of anneal. Fabricated bulk Si FinFETs with using 1-nm phosphosilicate glass showed threshold voltage shift with several anneals at 1- $\mu \text{m}$ and 70-nm gate lengths. Hole mobility at 1- $\mu \text{m}$ gate length and transconductance at 70-nm gate length were also reduced due to increase in impurity concentration of phosphorus diffused by anneals into Fins. Phosphorus diffusion into Fins with using 1-nm phosphosilicate glass was investigated and phosphorus behavior after anneal was clarified by electrical data of p-type bulk Si FinFETs.