Abstract
High-quality oxynitride gate dielectrics have been fabricated by rapid thermal processing of LPCVD SiO2 in reactive ambients (NH3 and O2). The as-deposited CVD oxides of 200 Á in thickness show no early breakdowns. The breakdown distribution becomes tighter, the interface state density is reduced, and the interface endurance property is improved after rapid thermal nitridation and reoxidation.
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