Abstract

The electrical characteristics of ultrathin oxynitride gate dielectrics prepared by in-situ multiple rapid thermal processing in reactive ambient (O/sub 2/ and NH/sub 3/) have been studied. Specifically, the conduction mechanism, charge trapping properties, time-dependent breakdown and interface hardness in oxynitride films have been characterized as a function of both RTO (rapid thermal reoxidation) and RTN (rapid thermal nitridation) processing parameters. In addition, N-channel MOSFETs have been fabricated using oxynitrides as gate dielectrics and their hot carrier immunity has been examined and compared with that of devices using pure thermal oxides. Devices with superior electrical characteristics and reliability have been produced by optimizing RTO/RTN parameters. >

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