Abstract
The electrical properties of lattice mismatched InAs/GaP heterojunctions are examined. In spite of a high dislocation density at the heterointerface, the current versus voltage characteristics show nearly ideal behavior with low reverse leakage currents and high breakdown voltages. The forward current varied exponentially with bias displaying ideal factors of 1.10 or less. Band offsets estimated from current–voltage and capacitance–voltage analysis are consistent with previous estimates based on differences in Schottky barrier heights.
Highlights
Various kinds of strain relaxation layers are used to reduce the density of threading dislocations which propagate into the active layers
The nearly relaxed InAs layertypically 2–20 nm thickis lattice matched to the In0.8Ga0.2As/In0.8Al0.2As system, which could provide a lattice matched heterostructure system for long-wavelength emitters and detectors and other small band gap devices
To assess the device potential for this technology, we examine the electrical characteristics of nearly relaxed InAs/GaP heterojunctions
Summary
Follow this and additional works at: https://docs.lib.purdue.edu/ecepubs Part of the Electrical and Computer Engineering Commons. M.; and Lundstrom, Mark S., "Electrical characteristics of nearly relaxed InAs/GaP heterojunctions" (1997). Various kinds of strain relaxation layers are used to reduce the density of threading dislocations which propagate into the active layers These 60°-type, threading dislocations typically pin the Fermi level and provide nonradiative recombination centers that degrade the optical and electrical performance of devices. In spite of the large lattice mismatchϷ11%͒ and high density of 90°-type dislocations, the electrical characteristics are surprisingly good, showing nearly ideal forward and reverse bias behavior. We note that some of the pϩN diodes displayed a small shunt leakage current, but no such leakage was observed in the other diodes This may indicate that the pϩ-InAs layer in the anisotype heterojunctions is somewhat more susceptible to defects possibly because of Fermi-level pinning near the conduction band. Summary of the I–V and C–V measurements and the conduction and valence band discontinuities deduced from the I–V barrier heights and C–V intercept voltages
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
