Abstract
The application of Schottky diodes in high speed switching circuits has often been limited because of conventional devices inherently low reverse breakdown voltages and large leakage currents. Guard-ring Schottky diodes exhibit low leakage current and high reverse breakdown voltage, but their application has been confined to low currents because of minority carrier injection from the guard-ring at high forward bias level.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
