High-current, high-voltage, moat-etched Schottky diode

Abstract

The application of Schottky diodes in high speed switching circuits has often been limited because of conventional devices inherently low reverse breakdown voltages and large leakage currents. Guard-ring Schottky diodes exhibit low leakage current and high reverse breakdown voltage, but their application has been confined to low currents because of minority carrier injection from the guard-ring at high forward bias level.