Abstract
A new insulator film, , has been fabricated using a vapour transport technique for use as an MIS interfacial layer on an n-InP substrate. This layer is obtained directly from phosphorus oxynitride (PON) solid sample. MIS diodes were made with the insulator deposited at and have been studied using current - voltage and capacitance - voltage characteristics. The modified thermionic emission (TE) theory can be used to explain the conduction mechanism on the MIS diode. The ideality factor and the barrier height are found to be equal to 2 and 0.67 eV respectively. In the Richardson plot, better linearity was observed when was plotted versus 1/nT than versus 1/T. The mean barrier height , and the barrier height at 0 K, , are found to be equal to 0.24 and 0.59 eV respectively. The relative permittivity of the insulator evaluated at room temperature from high-frequency capacitance measurement is equal to 7.8.
Published Version
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